149. SELF-HEATING EFFECTS IN SILICON NANOSCALE MOSFET

(A MULTISCALE MODELING APPROACH)

Abstract

Abstract: In this work we present a novel multiscale simulation approach that combines circuit level with device level simulations together with experimental measurements to uncover the temperature of the hot-spot at nanoscale MOSFET devices. The circuit level simulation is performed with COMSOL simulation software. This allows one to perform electro-thermal modeling given the input Joule heating terms, the magnitude and the location of which is determined with more physically-based electro-thermal Monte Carlo device simulator. Simulation results obtained with this simulator are in agreement with experimental measurements from IMEC using specialized heater-sensor test structures in common-source and common-drain configurations.