213. A COMPARATIVE STUDY OF SWITCHING PERFORMANCES AND EFFICIENCY OF GAN, SIC AND SI BASED DC-DC CONVERTERS

Marko Kamilovski,; Katerina Raleva,; Mario Makraduli

Marko Kamilovski, Faculty of Electrical Engineering and Information Technologies, “Ss. Cyril and Methodius” University in Skopje, Rugjer Bošković bb, P.O.Box 574, 1001 Skopje, Republic of Macedonia
Katerina Raleva, Faculty of Electrical Engineering and Information Technologies, “Ss. Cyril and Methodius” University in Skopje, Rugjer Bošković bb, P.O.Box 574, 1001 Skopje, Republic of Macedonia
Mario Makraduli Faculty of Electrical Engineering and Information Technologies, “Ss. Cyril and Methodius” University in Skopje, Rugjer Bošković bb, P.O.Box 574, 1001 Skopje, Republic of Macedonia

Keywords: wide bandgap semiconductors, GaN devices; on-resistance, DC-DC converters, power efficiency, switching times

Abstract

Wide bandgap (WBG) semiconductors offer many advantages over conventional silicon (Si) based devices such as faster switching speeds, lower internal capacitances, smaller size, lower power losses and higher efficiency. Due to their exceptional properties, these materials have gained significant attention in the field of power electronics. The wide bandgap of GaN (gallium-nitride) and the high-temperature tolerance of SiC (silicon carbide) make them ideal candidates for various power applications, from electric vehicles to renewable energy systems. This paper analyzes the overall efficiency and switching performances of three topologies of DC-DC converters in GaN technology and compare them with Si and SiC counterparts. The simulation results for the switching frequencies in the range of 100 kHz to 500 kHz show that the GaN based DC-DC converters provide smaller switching times and superior efficiency when compared to the same Si or SiC based DC-DC converters.